KXA1504_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KXA1504
Transistors
■ Features
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=-1.5A
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-25
V
VEBO
-5
V
IC
-1.5
A
PC
0.5
W
Tj
150
℃
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
■ Marking
Marking
NY
Symbol
Test conditions
VCBO IC= -100μA, IE=0
VCEO IC = -0.1mA, IB=0
VEBO IE= -100μA, IC=0
ICBO VCB= -40 V,IE=0
ICEO VCE= -20V, IB=0
IEBO VEB= -5V, IC=0
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC = -800mA
VCE(sat) IC=-800mA, IB= -80mA
VBE(sat) IC=-800mA, IB=-80mA
VBE(on) Ic=-1V,VCE=-10mA
VBEF IB=-1A
Cob VCB=-10V,IE =0,f=1MHz
fT VCE= -10V, IC=-50mA
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
160
320
40
-0.5 V
-1.2 V
-1
V
-1.3 V
20 pF
100
MHz
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