KX8N60F Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
N-Channel MOSFET
KX8N60F
■ Features
● VDS (V) = 600V
● ID = 7.5 A (VGS = 10V)
● RDS(ON) ＜ 1.2Ω (VGS = 10V)
● Low gate charge
● 100% avalanche tested
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
1.47max
2.54typ
2.54typ
2.76 ±0.20
0.80 ±0.20
0.50 ±0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note.1)
T=25℃
T=100℃
Single Pulsed Avalanche Energy (Note.2)
Avalanche Current (Note.1)
Repetitive Avalanche Current (Note.1)
Peak Diode Recovery dv/dt (Note.3)
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
dv/dt
Power Dissipation
Tc=25℃
PD
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Lead Temperature for Soldering Purposes
Junction Temperature
Storage Temperature Range
RthJA
RthJC
TL
TJ
Tstg
Note.1: Pulse width limited by maximum junction temperature
Note.2: L=15.7mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting TJ=25℃
Note.3: ISD ≤7.0A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25℃
Rating
600
±30
7.5
4.4
28
420
7.5
14.7
5.5
48
0.38
62.5
2.6
300
150
-55 to 150
Unit
V
A
mJ
A
mJ
V/ns
W
W/℃
℃/W
℃
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