KX8N60C Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
■ Features
● VDS (V) = 600V
● ID = 7.5 A (VGS = 10V)
● RDS(ON) ＜ 1.2Ω (VGS = 10V)
● Fast switching
● Improved dv/dt capability
N-Channel MOSFET
KX8N60C
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
D
G
S
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
4.50 ± 0.20
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.40 ± 0.20
1 GATE
2 DRAIN
3 SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Tc=100℃
Pulsed Drain Current
Avalanche Current
Power Dissipation
Tc=25℃
Derate above 25℃
Single Pulsed Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Sink
Thermal Resistance.Junction- to-Case
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJS
RthJC
TL
TJ
Tstg
Note.1: L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
Note.2: ISD ≤ 7.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
Rating
600
±30
7.5
4.6
30
7.5
147
1.18
230
14.7
4.5
62.5
0.5
0.85
300
150
-55 to 150
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
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