KX6P02 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement MOSFET
KX6P02
MOSFET
■ Features
● VDS (V) =-20V
● Low ON-resitance:
RD S (O N ) =88.4mΩ (VGS =-1.5V)
RD S (O N ) = 56mΩ (VGS =-1.8V)
RD S (O N ) =39.7mΩ (VGS =-2.5V)
RD S (O N ) = 29.8mΩ VGS = -4.5 V)
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
*1
Pulsed Drain Current
*2
Power Dissipation
*3
Power Dissipation t=10s
Junction Temperature
Junction and Storage Temperature Range
Symbol
Rating
Unit
VDS
-20
V
VGS
±8
ID
-6.0
A
IDM
-24
1
PD
W
2
TJ
150
℃
Tst g
-55 to 150
*1 The channel temperature should not exceed 150°C during use.
*2 PW ≦ 10μs,Duty ≦ 1％
*3 Mounted on a FR4 board.
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