KX6N80F Datasheet, PDF (1/6 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
N-Channel MOSFET
KX6N80F
■ Features
● VDS (V) = 800V
● ID = 7 A (VGS = 10V)
● RDS(ON) ＜ 1.9Ω (VGS = 10V)
● Low Gate Charge (Typ. 27 nC)
● Fast switching
● 100% Avalanche Tested
D
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
1.47max
2.54typ
2.54typ
2.76 ±0.20
0.80 ±0.20
0.50 ±0.20
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Tc=100℃
Pulsed Drain Current
(Note.1)
Power Dissipation
- Derate above 25°C
Tc=25℃
Single Pulsed Avalanche Energy (Note.2)
Repetitive Avalanche Energy (Note.1)
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
EAR
dv/dt
RthJA
RthJC
TJ
Tstg
Rating
800
±30
7
4.2
28
56
0.44
650
16.7
4.5
62.5
2.25
150
-55 to 150
Note.1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note.2: L = 25mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
Note.3: ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
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