KX6N70 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

DIP Type
N-Channel Enhancement MOSFET
KX6N70
MOSFET
■ Features
● VDS (V) = 700V
● ID = 6.0A (VGS = 10V)
● RDS(ON) ＜ 1.8Ω (VGS = 10V)
● Low gate charge ( typical 16nC)
D
G
S
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
1.52 ±0.10
123
2.54TYP
[2.54 ±0.20 ]
0.80 ±0.10
2.54TYP
[2.54 ±0.20 ]
10.00 0.20
0.50
+0.10
–0.05
2.40 ±0.20
1 GATE
2 DRAIN
3 SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Tc=100℃
Pulsed Drain Current (Note.1)
Avalanche Current
(Note.1)
Repetitive Avalanche Energy (Note.1)
Single Pulsed Avalanche Energy (Note.2)
Power Dissipation
Tc=25℃
Derate above 25℃
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAR
EAS
PD
dv/dt
RthJA
RthJC
RthJS
TL
TJ
Tstg
Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature
Note.2: L=8mH,IAS=6.0A,VDD=50V,RG=25Ω,Starting TJ=25℃
Note.3; ISD≤6.0A,di/dt≤200A/us,VDD≤BVDSS,Starting TJ=25℃
Rating
700
±30
6.0
3.6
24
6.0
14.7
150
147
1.18
4.5
62.5
0.85
0.5
300
150
-55 to 150
Unit
V
A
mJ
W
W/℃
V/ns
℃/W
℃
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