KX4N60F Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
■ Features
● VDS (V) = 600V
● ID = 2.4 A (VGS = 10V)
● RDS(ON) ＜ 2.5Ω (VGS = 10V)
MOSFET
N-Channel MOSFET
KX4N60F
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
D
G
S
1.47max
1 23
2.54typ
2.54typ
0.80 ±0.20
0.50 ±0.20
2.76 ±0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Ta=25℃
Ta=100℃
Pulsed Drain Current
Repetitive and Non-Repetitive Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy
Repetitive Avalanche Energy
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VDG
VGS
ID
IDM
IAS,IAR
PD
EAS
EAR
RthJA
RthJC
TJ
Tstg
Rating
600
600
±30
2.4
1.5
18
4.5
35
295
9
55
3.6
150
-55 to 150
Unit
V
A
W
mJ
℃/W
℃
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