KX3N80 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
N-Channel MOSFET
KX3N80
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
■ Features
● VDS (V) = 800V
● ID = 3 A (VGS = 10V)
● RDS(ON) ＜ 5Ω (VGS = 10V)
● Low gate charge ( typical 15 nC)
● Low Crss ( typical 7.0 pF)
● Fast switching
D
G
S
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10
–0.05
2.40 ± 0.20
1 GATE
2 DRAIN
3 SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Derate above 25°C
Single Pulsed Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance, Case-to-Sink
Junction Temperature
Tc=25℃
Tc=100℃
Tc=25℃
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJC
RthJCS
TJ
TL
Tstg
Note.1: L = 67mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
Note.2: ISD ≤ 3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Rating
800
±30
3
1.9
12
3
75
0.6
120
12
5
62
1.67
0.5 (typ)
150
300
-55 to 150
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
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