KX2001P_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

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PNP Transistors
KX2001P
Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
U nit: mm
0.1 ^+0.01
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-200
-180
-5
-0.2
0.15
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -120V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-50 mA, IB=-5mA
VBE(sat) IC= -50 mA, IB=- 5mA
hFE(1) VCE= -5V, IC= -10mA
fT
VCE= -5V, IC= -10mA,f=30MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
■ Classification of hfe
Marking
Range
21P
100-250
3
0.5 ^+0.1
-0.1
0.3 +0.25
-0.05
Unit
V
A
W
℃
1. Base
2. Emitter
3. Collecter
Min Typ Max Unit
-200
-180
V
-5
-100
nA
-100
-0.5
V
-1.0
100
250
100
300 MHz
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