KX2000N_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SSMMDD TTyyppee
NPN Transistors
KX2000N
Transistors
Features
High Voltage Transistors
Pb-Free Packages are Available
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
U nit :mm
0.1 ^+0.01
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
250
Collector - Emitter Voltage
VCEO
180
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
0.2
A
Collector Power Dissipation
PC
0.15
W
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 120 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC= 50 mA, IB= 5mA
hFE(1) VCE=5V, IC=10mA
fT
VCE= 5V, IC=10mA,f=30MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
■ Classification of hfe
Marking
Range
20N
100-250
3
0.5 ^+0.1
-0.1
0.3 +0.25
-0.05
1. Base
2. Emitter
3. Collecter
Min Typ Max Unit
250
180
V
5
100
nA
100
0.5
V
1.0
100
250
100
300 MHz
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