KX12N65F Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
N-Channel MOSFET
KX12N65F
■ Features
● VDS (V) = 650V
● ID = 12 A (VGS = 10V)
● RDS(ON) ＜ 850mΩ (VGS = 10V)
● High ruggedness
D
G
S
TO-220F
10.16 0.20
(7.00)
ø3.18 0.10
Unit:mm
2.54 0.20
(0.70)
(1.00x45 )
12
MAX1.47
0.80 0.10
#1
0.35 0.10
2.54TYP
[2.54 0.20]
3
(30 ₎
2.54TYP
[2.54 0.20]
9.40 0.20
0.50
+0.10
–0.05
2.76 0.20
1. Gate
2. Drain
3. Source
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Tc=25℃
Tc=100℃
Power Dissipation
Derating Factor above 25oC
Tc=25℃
Single pulsed Avalanche Energy (Note.2)
Repetitive Avalanche Energy
(Note.1)
Peak diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
EAR
dv/dt
RthJA
RthJC
TJ
Tstg
Rating
650
±30
12
7.6
48
54
0.43
790
104
4.5
45.3
2.3
150
-55 to 150
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
Note.1: Repeatitive rating : pulse width limited by junction temperature.
Note.2: L = 11mH, IAS = 12A, VDD = 50V, RG=25Ω, Starting TJ = 25℃
Note.3: ISD ≤ 12.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25℃
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