KX10N60F Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

DIP Type
MOSFET
■ Features
● VDS (V) = 600V
● ID = 10 A (VGS = 10V)
● RDS(ON) ＜ 730mΩ (VGS = 10V)
● Qg(typ.)= 29.5nC
N-Channel MOSFET
KX10N60F
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
1
1.47max
23
D
0.50 ±0.20
2.54typ
2.54typ
0.80 ±0.20
Unit: mm
0.70 ±0.20
2.76 ±0.20
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Tc=70℃
Pulsed Drain Current
(Note.1)
Power Dissipation
Repetitive Avalanche Energy
Tc=25℃
Derate above 25℃
(Note.2)
Single Pulsed Avalanche Energy (Note.1)
Peak Diode Recovery dv/dt
(Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAR
EAS
dv/dt
RthJA
RthJC
TJ
Tstg
Note.1: L =5.5mH, IS=10A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note.2: Repetivity rating : Pulse width limited by junction temperature.
Note.3: IS≤10A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Rating
600
±30
10
6
25
46
0.37
16.5
400
4.5
62.5
2.7
150
-55 to 150
Unit
V
A
W
W/℃
mJ
V/ns
℃/W
℃
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