KUK7109-75AIE Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – TrenchMOSTM standard level FET

SMD Type
TransistIoCrs
TrenchMOS^TM standard level FET
KUK7109-75AIE
TO-263
Unit: mm
Features
Integrated temperature sensor
Electrostatic discharge protection
Q101 compliant
Standard level compatible.
+0.2
4.57 _+0.1
-0.2
1.27-0.1
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC) Tmb = 25 ,VGS = 10 V
Drain current (DC) Tmb = 100 ,VGS = 10 V
Drain current (pulse peak value) *1
Total power dissipation Tmb = 25
gate-source clamping current (continuous)
gate-source clamping current *3
Storage & operating temperature
reverse drain current (DC) Tmb = 25
pulsed reverse drain current *1
non-repetitive avalanche energy *2
electrostatic discharge voltage; all pins *4
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
Symbol
VDS
VDGR
VGS
ID
ID
IDM
Ptot
IGS(CL)
Tstg, Tj
IDR
IDRM
EDS(AL)S
Vesd
Rth j-mb
Rth j-a
Rating
75
75
20
120
75
480
272
10
50
-55 to 175
120
75
480
739
6
0.55
50
Unit
V
V
V
A
A
A
W
mA
mA
A
A
A
J
KV
K/W
K/W
* 1 Tmb = 25 ; pulsed; tp 10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS 75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
*3 tp = 5 ms; = 0.01
*4 Human Body Model; C = 100 pF;R = 1.5 K
1¹G^ga^at^te^e
2²D^dr^ra^aiⁱnⁿ
3³S^so^ou^ur^rc^ce^e
www.kexin.com.cn ¹