KUK108-50DL Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PowerMOS transistor Logic level TOPFET

SMD Type
TransistIoCrs
PowerMOS transistor Logic level TOPFET
KUK108-50DL
Features
Vertical power DMOS output stage
Low on-state resistance
Overload protection against over temperature
Overload protection against short circuit load
Latched overload protection reset by input
5 V logic compatible input level
Control of power MOSFET and supply of overload
protection circuits derived from input
Lower operating input current permits direct drive by micro-controller
ESD protection on input pin
Overvoltage clamping for turn off of inductive loads
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11GIantpeut
22DrDarinain
33SSouorucrece
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Condition
Rating
Unit
Continuous drain source voltage*1
VDS
50
V
Continuous input voltage
VIS
6
V
Continuous drain current
ID
Tmb 25 ; VIS = 5 V
13.5
A
Continuous drain current
ID
Tmb 100 ; VIS = 5 V
8.5
A
Repetitive peak on-state drain current
IDRM Tmb 25 ; VIS = 5 V
54
A
Total power dissipation
PD
Tmb 25
40
W
Storage temperature
Tstg
-55 to +150
Continuous junction temperature*2
Tj
150
Lead temperature
Tsold
250
Protection supply voltage*3
VISP
4
V
Protected drain source supply voltage
VDDP(T) VIS = 5 V
50
V
Protected drain source supply voltage*4 VDDP(P) VIS = 5 V
24
V
Instantaneous overload dissipation
PDSM Tmb = 25
0.6
kW
Repetitive peak clamping current
IDROM VIS = 0 V
15
A
Non-repetitive clamping energy
EDSM Tmb 25 ; IDM = 15 A;VDD 20 V;
200
mJ
Repetitive clamping energy
EDRM
Tmb 95 ; IDM = 8 A;VDD 20 V; f =
250 Hz
20
mJ
Electrostatic discharge capacitor voltage
VC
C = 250 pF; R = 1.5 kÙ
2
kV
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