KTHC5513 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Power MOSFET

SMD Type
Power MOSFET
KTHC5513
Features
Complementary N-Channel and P-Channel MOSFET
Leadless SMD Package Featuring Complementary Pair
Low RDS(on) in a ChipFET Package for High Efficiency Performance
Low Profile ( 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Gate-source voltage
Drain current Continuous *1 TA = 25
TA = 85
t5
Drain current Pulsed t = 10 s *1
Total power dissipation
t5
Operating and Storage Temperature Range
Lead Temperature for Soldering Purposes
Junction-to-Ambient *1
Steady State
t5
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
TL
R JA
N-Channel
P-Channel
20
12
2.9
-2.2
2.1
-1.6
3.9
-3
12
-9
1.1
2.1
-55 to 150
260
110
60
Unit
V
V
A
A
W
W
/W
*1 Surface Mounted on FR4 board using 1 in sq pad size
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