KTD1898_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTD1898
Transistors
■ Features
● Small Flat Package
● General Purpose Application
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
100
80
5
1
500
250
150
-55 to 150
Unit
V
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 80 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=20mA
VBE(sat) IC=500 mA, IB=20mA
hFE VCE= 3V, IC= 500mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 50mA , f=100MHz
Min Typ Max Unit
100
80
V
5
1
uA
1
0.4
V
1
70
400
20
pF
100
MHz
■ Classification of hfe
Type
KTD1898-O
Range
70-140
Marking
ZO
KTD1898-Y
120-240
ZY
KTD1898-G
200-400
ZG
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