KTD1304-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
KTD1304 (KTD1304S)
■ Features
● High Emitter-Base Voltage :VEBO = 12V(Min)
● High Reverse hFE
● Low on Resistance
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
25
VCEO
20
V
VEBO
12
IC
300
mA
IB
30
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
On resistance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB=25 V , IE= 0
IEBO VEB= 12V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
hFE(1) VCE= 2V, IC= 4mA (FOR)
hFE(2) VCE= 2V, IC= 4mA (REV)
Ron IB=1mA,Vin=0.3V,f=1KHz
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 1mA
■ Marking
Marking
J3Y
Min Typ Max Unit
25
20
V
12
100
nA
100
0.25
V
1
200
800
20
0.6
Ω
10
pF
60
MHz
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