KTD1302_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTD1302
Transistors
■ Features
● Small Flat Package
● Audio Muting Application
● High Emitter-Base Voltage
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
25
20
12
300
500
250
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 25 V , IE= 0
IEBO VEB= 12V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
VCE= 2V, IC= 4mA (FOR)
hFE
VCE= 2V, IC= 4mA (REV)
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 1mA , f=100MHz
Min Typ Max Unit
25
20
V
12
0.1
uA
0.1
0.25
V
1
200
800
20
10
pF
60
MHz
■ Marking
Marking
1302
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