KTD1003 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

SMD Type
ICIC
HEXFET Power MOSFET
KRF7756
Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.2mm)
Available in Tape & Reel
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ TA = 25
ID
Continuous Drain Current, VGS @ -4.5V @ TA = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@TA= 25
PD
Power Dissipation *2
@TA = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, 10sec
Rating
-12
-4.3
-3.5
-17
1.0
0.64
8
8
-55 to + 150
125
Unit
V
A
W
W
m W/
V
/W
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