KTC4379_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTC4379
Transistors
■ Features
● Low saturation voltage
● High speed switching time
● Complementary to KTA1666
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
1.Base
2.Collector
3.Emitter
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
50
VCEO
50
V
VEBO
5
IC
2
A
500
mW
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn on Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 1 mA， IE= 0
50
VCEO Ic= 10 mA， IB= 0
50
V
VEBO IE= 1 mA， IC= 0
5
ICBO
IEBO
VCB= 50 V , IE= 0
VEB= 5V , IC=0
100
nA
100
VCE(sat) IC=1 A, IB=50mA
VBE(sat) IC=1 A, IB=50mA
0.5
V
1.2
VCE= 2V, IC= 500mA
hFE
VCE= 2V, IC= 1.5 A
70
240
40
ton
0.1
tstg VCC=30V, IC=1A, IB1=-IB2=-0.05A
1
us
tf
0.1
Cob VCB= 10V, IE= 0,f=1MHz
30
pF
fT
VCE= 2V, IC= 500mA
120
MHz
■ Classification of hfe(1)
Type
Range
Marking
KTC4379-O
70-140
UO
KTC4379-Y
120-240
UY
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