KTC4376_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTC4376
Transistors
■ Features
● 1W (Mounted on Ceramic Substrate)
● Small Flat Package
● Complementary to KTA1664
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
35
30
5
800
160
500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 10 mA，IB=0
VEBO IE= 100uA， IC= 0
ICBO VCB= 35V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500mA, IB=20mA
VBE(sat) IC=500mA, IB=20mA
VBE VCE= 1V, IC=10mA
VCE= 1V, IC=100mA
hFE
VCE= 1V, IC=700mA
Cob VCB= 10V,IE=0,f=1MHz
fT
VCE= 5V, IC= 10mA
■ Classification of hfe(1)
Type
KTC4376-O
Range
100-200
Marking
PO
KTC4376-Y
160-320
PY
1.Base
2.Collector
3.Emitter
Unit
V
mA
mW
W
℃
Min Typ Max Unit
35
30
V
5
0.1
uA
0.1
0.5
1.2 V
0.5
0.8
100
320
35
13
pF
120
MHz
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