KTC4370_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
Transistors
NPN Transistors
KTC4370
■ Features
● High Transition Frequency
● Complementary to KTA1659
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
2.76 ±0.20
1.47max
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc = 25℃
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
2.54typ
2.54typ
0.80 ±0.20
0.50 ±0.20
1. Base
2. Collector
3. Emitter
Rating
Unit
160
160
V
5
1.5
A
0.15
20
W
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 10 mA，IB=0
VEBO IE= 100uA， IC= 0
ICBO VCB= 160V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=500mA, IB=50mA
VBE(sat) IC=500mA, IB=50mA
VBE VCE= 5V, IC=500mA
hFE VCE= 5V, IC=100mA
Cob VCB= 10V,IE=0,f=1MHz
fT
VCE= 10V, IC= 100mA
Min Typ Max Unit
160
160
V
5
1
uA
1
1.5
1.2 V
1
70
240
25
pF
100
MHz
■ Classification of hfe
Type
KTC4370-O
Range
70-140
KTC4370-Y
120-240
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