KTC4076_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTC4076
Transistors
■ Features
● Excellent hFE Linearity
● Complementary to KTA2015
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
35
VCEO
30
V
VEBO
5
IC
500
mA
IB
50
PC
100
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 1 mA，IB=0
VEBO IE= 100uA， IC= 0
ICBO VCB= 35V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
VBE VCE= 1V, IC=100mA
VCE= 1V, IC=100mA
hFE
O
VCE= 6V, IC=400mA
Y
Collector output capacitance
Transition frequency
Cob VCB= 6V,IE=0,f=1MHz
fT
VCE= 6V, IC= 20mA
Min Typ Max Unit
35
30
V
5
0.1
uA
0.1
0.25
1.2 V
1
70
240
25
40
7
pF
300
MHz
■ Classification of hfe
Type
KTC4076-O
Range
70-140
Marking
WO
KTC4076-Y
120-240
WY
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