KTC4075_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
KTC4075
Transistors
■ Features
● Excellent hFE Linearity
● Low Noise
● Complementary to KTA2014
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
50
V
VEBO
5
IC
150
mA
IB
30
PC
100
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise Figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100uA， IE= 0
60
VCEO Ic= 1 mA，IB=0
50
V
VEBO IE= 100uA， IC= 0
5
ICBO
IEBO
VCB= 60V , IE= 0
VEB= 5V , IC=0
0.1
uA
0.1
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
0.25
V
1.2
hFE VCE= 6V, IC=2mA
70
700
NF VCE= 6V, IC= 0.1 mA,Rg=10 KΩ,f=1KHz
10 dB
Cob VCB= 10V,IE=0,f=1MHz
3.5 pF
fT
VCE= 10V, IC= 1mA
80
MHz
■ Classification of hfe
Type
KTC4075-O
Range
70-140
Marking
LO
KTC4075-Y
120-240
LY
KTC4075-GR
200-400
LG
KTC4075-BL
350-700
LL
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