KTC3467_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
NPN Transistors
KTC3467
Transistors
TO-92L _{4.9 ± 0.2}
Unit:mm
■ Features
● High Voltage and High fT
● Low Collector Output Capacitance
● Complementary to KTA1070
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
0.7 ±0.1
0.45 ±0.1
123
1.27
2.54 ±0.1
1.60 (max)
4.0(min)
1. Emitter
2.Collector
3.Base
Rating
Unit
200
200
V
5
100
mA
200
1
W
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Reverse transfer capassification
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 1 mA，IB=0
VEBO IE= 100uA， IC= 0
ICBO VCB= 150V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=20mA, IB=2mA
VBE(sat) IC=20mA, IB=2mA
hFE VCE= 5V, IC=10mA
Cre VCB= 30V,f=1MHz
Cob VCB= 30V,f=1MHz
fT
VCE= 30V, IC= 10mA
Min Typ Max Unit
200
200
V
5
0.1
uA
0.1
0.6
V
1
70
240
1.2
pF
1.7
150
MHz
■ Classification of hfe
Type
KTC3467-O
Range
70-140
KTC3467-Y
120-240
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