KTC3209_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
Transistors
NPN Transistors
KTC3209
TO-92L _{4.9 ± 0.2}
Unit:mm
■ Features
● Low Saturation Voltage
● High Speed Switching Time
● Complementary to KTA1281
0.7 ±0.1
0.45 ±0.1
123
1.27
2.54 ±0.1
1.60 (max)
4.0(min)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
50
VCEO
50
V
VEBO
5
IC
2
A
PC
1
W
TJ
150
℃
Tstg
-55 to 150
1. Emitter
2.Collector
3.Base
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 1 mA， IE= 0
VCEO Ic= 10 mA，IB=0
VEBO IE= 1 mA， IC= 0
ICBO VCB= 50V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=1 A, IB=50mA
VBE(sat) IC=1 A, IB=50mA
VCE= 2V, IC=500mA
hFE
VCE= 2V, IC=1.5 A
Turn On Time
ton
Min Typ Max Unit
50
50
V
5
0.1
uA
0.1
0.5
V
1.2
70
240
40
0.1
Storage Time
tstg
1
us
Fall Time
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
KTC3209-O
Range
70-140
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 500mA
KTC3209-Y
120-240
0.1
30
pF
100
MHz
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