KTC3202_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
Transistors
NPN Transistors
KTC3202
TO-92
4.8 ± 0.3
Unit:mm
3.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Complementary to KTA1270
0.60 Max
0.45 ± 0.1
12 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
1.27
2.54
Rating
Unit
35
30
V
5
500
mA
625
mW
150
℃
-55 to 150
0.5
1.Emitter
2.Collector
3.Base
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 1 mA，IB=0
Emitter - base breakdown voltage
VEBO IE= 100uA， IC= 0
Collector-base cut-off current
ICBO VCB= 35 V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
Base - emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
Base - emitter voltage
VBE VCE= 1V, IC=100mA
VCE= 1V, IC=100mA
DC current gain
Collector output capacitance
hFE
VCE= 6V, IC=400mA
O
Y
Cob VCB= 6V, IE= 0,f=1MHz
Transition frequency
fT
VCE= 6V, IC= 20mA
■ Classification of hfe(1)
Type
KTC3202-O
Range
70-140
KTC3202-Y
120-240
Min Typ Max Unit
35
30
V
5
0.1
uA
0.1
0.25
1.2 V
1
70
240
25
40
7
pF
300
MHz
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