KTC3198_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
Transistors
NPN Transistors
KTC3198
TO-92
4.8 ± 0.3
Unit:mm
3.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Low Noise
● Complementary to KTA1266
0.60 Max
0.45 ± 0.1
0.5
12 3
1.Emitter
1.27
2.54
2.Collector
3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
VCEO
50
V
VEBO
5
IC
150
mA
IB
50
PC
625
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
VCBO
VCEO
Ic= 100uA， IE= 0
Ic= 1 mA，IB=0
60
50
V
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VEBO
ICBO
IEBO
IE= 100uA， IC= 0
VCB= 60 V , IE= 0
VEB= 5V , IC=0
5
0.1
uA
0.1
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
0.25
V
1
DC current gain
VCE= 6V, IC=2mA
hFE
VCE= 6V, IC=150mA
70
700
25
Base intrinsic resistance
rbb' VCB= 10V, IC= -1mA,f=30MHz
50
Ω
Noise Figure
NF VCE= 6V, IC= 0.1mA,Rg=10KΩ,f=3MHz
10 dB
Collector output capacitance
Cob VCB= 10V, IE= 0,f=1MHz
3.5 pF
Transition frequency
fT
VCE= 10V, IE= -1mA
80
MHz
■ Classification of hfe(1)
Type
KTC3198-O
Range
70-140
KTC3198-Y
120-240
KTC3198-GR
200-400
KTC3198-BL
300-700
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