KTC2026_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
■ Features
● Low saturation voltage
● Complementary to KTA1046
Transistors
NPN Transistors
KTC2026
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
1.47max
2.54typ
2.54typ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
60
Emitter - Base Voltage
VEBO
7
Collector Current - Continuous
IC
3
Base Current
IB
0.5
Collector Power Dissipation
Ta= 25℃
2
PC
Tc= 25℃
25
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= 100uA， IE= 0
Collector- emitter breakdown voltage
VCEO Ic= 50 mA，IB=0
Emitter - base breakdown voltage
VEBO IE= 100uA， IC= 0
Collector-base cut-off current
ICBO VCB= 60 V , IE= 0
Emitter cut-off current
IEBO VEB= 7V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=2 A, IB=200mA
Base - emitter saturation voltage
VBE(sat) IC=2 A, IB=200mA
Base - emitter voltage
VBE VCE= 5V, IC=500mA
DC current gain
hFE VCE= 5V, IC=500mA
Turn On Time
ton
Storage Time
tstg
Fall Time
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
KTC2026-Y
Range
100-200
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 500mA
KTC2026-G
150-300
2.76 ±0.20
0.80 ±0.20
0.50 ±0.20
1. Base
2. Collector
3. Emitter
Unit
V
A
W
℃
Min Typ Max Unit
60
60
V
7
0.1
uA
0.1
1
1.2 V
1
100
300
0.65
1.3
us
0.65
35
pF
30
MHz
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