KTC2018_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
KTC2018
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
■ Features
● Low Collector Emitter Saturation Voltage.
● High Breakdown Voltage
● Complementary to KTA1038
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc= 25℃
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
10.00 ± 0.20
Rating
Unit
100
100
V
5
5
A
0.5
40
W
150
℃
-55 to 150
4.50 ± 0.20
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.40 ± 0.20
1. Base
2. Collector
3. Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 10 mA， IE= 0
VCEO Ic= 50 mA，IB=0
VEBO IE= 10 mA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=4 A, IB=400mA
VBE(sat) IC=4 A, IB=400mA
VBE VCE= 5V, IC= 1 A
VCE= 5V, IC= 1 A
hFE
VCE= 5V, IC= 4 A
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 1 A
■ Classification of hfe（1）
Type
KTC2018-O
Range
70-140
KTC2018-Y
120-240
Min Typ Max Unit
100
100
V
5
1
uA
1
2
1.2 V
1.5
70
240
20
40
pF
30
MHz
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