KTC2016_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
KTC2016
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
■ Features
● Low Collector Emitter Saturation Voltage.
● Complementary to KTA1036
■ Absolute Maximum Ratings Ta = 25℃
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10
–0.05
2.40 ± 0.20
1. Base
2. Collector
3. Emitter
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Ta = 25℃
Tc = 25℃
Symbol
Rating
Unit
VCBO
60
VCEO
60
V
VEBO
7
IC
3
A
IB
0.5
2
PC
W
30
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 50 mA，IB=0
VEBO IE= 100μA， IC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=2 A, IB=200mA
VBE(sat) IC=2 A, IB=200mA
VBE VCE= 5V, IC= 500mA
hFE VCE= 5V, IC= 500mA
Min Typ Max Unit
60
60
V
7
0.1
uA
0.1
1
1.2 V
1
100
300
Turn On Time
ton
0.65
Storage Time
tstg
1.3
us
Fall Time
Collector output capacitance
Transition frequency
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 5V, IC= 500mA
0.65
35
pF
30
MHz
■ Classification of hfe
Type
KTC2016-Y
Range
100-200
KTC2016-G
150-300
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