KTC1020_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

DIP Type
NPN Transistors
KTC1020
TO-92M
6.0 ± 0.2
Transistors
Unit:mm
■ Features
● Excelent hFE Linearity
● 1 Watt Amplifier Application
● Complementary to KTA1021
1.0 ±0.1
0.50 ±0.1
1 23
1.50
3.0 ±0.1
1.60 (max)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
4.0(min)
Rating
Unit
35
30
V
5
500
mA
100
400
mW
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 35 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=100 mA, IB=10mA
VBE(sat) IC=100 mA, IB=10mA
VBE VCE= 1V, IC= 100mA
hFE(1) VCE= 1V, IC= 100mA
hFE(2) VCE= 6V, IC= 400mA
Cob VCB= 6V, IE= 0,f=1MHz
fT
VCE= 6V, IC= 20mA
1. Emitter
2.Collector
3.Base
Min Typ Max Unit
35
30
V
5
100
nA
100
0.25
1.2 V
1
100
240
25
7
pF
300
MHz
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