KTA2015_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA2015
Transistors
■ Features
● Excellent hFE Linearity
● Complementary to KTC4076
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-35
-30
-5
-500
-50
100
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 uA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA，IB=0
Emitter - base breakdown voltage
VEBO IE= -100 uA， IC=0
Collector-base cut-off current
ICBO VCB= -35V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base - emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
Base - emitter voltage
VBE VCE= -1V, IC= -100mA
VCE= -1V, IC= -100mA
DC current gain
hFE
VCE= -1V, IC= -400mA
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
KTA2015-O
Range
Marking
70- 140
ZO
Cob VCB= -6V, f=1MHz
fT
VCE= -10V, IC= -20mA
KTA2015-Y
120-240
ZY
Unit
V
mA
mW
℃
Min Typ Max Unit
-35
-30
V
-5
-0.1
uA
-0.1
-0.25
-1.2 V
-1
70
240
O
25
Y
40
13
pF
200
MHz
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