KTA2014_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA2014
Transistors
■ Features
● Excellent hFE Linearity
● Low Noise
● Small Package
● Complementary to KTC4075
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-50
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Base Current
IC
-150
mA
IB
-30
Collector Power Dissipation
PC
100
mW
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise Figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 uA， IE=0
-50
VCEO Ic= -1 mA，IB=0
-50
V
VEBO IE= -100 uA， IC=0
-5
ICBO
IEBO
VCB= -50V , IE=0
VEB= -5V , IC=0
-0.1
uA
-0.1
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
-0.3
V
-1.2
hFE VCE= -6V, IC= -2mA
70
400
NF VCE= -6V, IC= -0.1mA,Rg=10KΩ,f=1KHz
10 dB
Cob VCB= -10V,IE=0, f=1MHz
7 pF
fT
VCE= -10V, IC= -1mA
80
MHz
■ Classification of hfe
Type
KTA2014-O
Range
70-140
Marking
SO
KTA2014-Y
120-240
SY
KTA2014-G
200-400
SG
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