KTA1668_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1668
Transistors
■ Features
● High Voltage : VCEO=-60V(Min.).
● High Current : IC(Max.)=-1A.
● High Transition Frequency
● Complementary to KTC4378.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-80
VCEO
-60
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector Current - Pulse
IC
-1
A
ICP
-2
Collector Power Dissipation
500
mW
PC
1
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -80V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
VCE= -2V, IC= -50mA
hFE
VCE= -2V, IC= -1A
Cob VCB= -10V, f=1MHz
fT
VCE= -10V, IC= -50mA
Min Typ Max Unit
-80
-60
V
-5
-0.1
uA
-0.1
-0.7
V
-1.2
60
200
30
12
pF
150
MHz
■ Classification of hfe(1)
Type
KTA1668-O
Range
60-120
Marking
JO
KTA1668-Y
100-200
JY
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