KTA1666_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1666
Transistors
■ Features
● Small Flat Package
● Low Saturation Voltage
● Power Amplifier and Switching Application
● Comlementary to KTC4379
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-50
-50
-5
-2
500
250
150
-55 to 150
Unit
V
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -1 mA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-20mA (Note.1)
VBE(sat) IC=-1 A, IB=-20mA (Note.1)
VCE= -2V, IC= -500mA
hFE
VCE= -2V, IC= -1.5A
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA
Note.1: Pulse test: pulse width ≤300 uS, duty cycle≤ 2.0%.
■ Classification of hfe(1)
Type
KTA1666-O
Range
70-140
Marking
WO
KTA1666-Y
120-240
WY
Min Typ Max Unit
-50
-50
V
-5
-0.1
uA
-0.1
-0.5
V
-1.2
70
240
40
40 pF
120
MHz
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