KTA1664_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1664
Transistors
■ Features
● 1W (Mounted on Ceramic Substrate)
● Small Flat Package
● Comlementary to KTC4376
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-35
-30
-5
-800
-160
500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -1 mA， IC=0
ICBO VCB= -35V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=- 500mA, IB=-20mA
VBE(sat) IC=- 500mA, IB=-20mA
VBE VCE= -1V, IC= -10mA
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC= -700mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -10mA
■ Classification of hfe(1)
Type
KTA1664-O
Range
100-200
Marking
RO
KTA1664-Y
160-320
RY
Unit
V
mA
mW
W
℃
Min Typ Max Unit
-35
-30
V
-5
-0.1
uA
-0.1
-0.7
-1.2 V
-0.8
100
320
35
19
pF
120
MHz
www.kexin.com.cn ¹