KTA1663_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1663
Transistors
■ Features
● 1W (Mounted on Ceramic Substrate)
● Small Flat Package
● Comlementary to KTC4375
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-30
VCEO
-30
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Base Current
IC
-1.5
A
IB
-0.3
Collector Power Dissipation
500
mW
PC
1
W
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1 mA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -1 mA， IC=0
ICBO VCB= -30V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1.5 A, IB=-30mA
VBE(sat) IC=-1.5 A, IB=-30mA
VBE VCE= -2V, IC= -500mA
hFE VCE= -2V, IC= -500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA
■ Classification of hfe
Type
KTA1663-O
Range
100-200
Marking
HO
KTA1663-Y
160-320
HY
Min Typ Max Unit
-30
-30
V
-5
-0.1
uA
-0.1
-2
-1.2 V
-1
100
320
50 pF
120
MHz
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