KTA1661_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1661
Transistors
■ Features
● High Voltage
● High Transition Frequency
● Small Flat Package
● Complementary to KTC4373
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-120
-120
-5
-800
-160
500
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -1mA， IE=0
VCEO Ic= -10 mA， IB=0
VEBO IE= -1mA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC= -500 mA, IB=- 50mA
VBE VCE= -5V, IC= -500mA
hFE VCE= -5V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -100mA
■ Classification of hfe
Type
KTA1661-O
Range
80-160
Marking
DO
KTA1661-Y
120-240
DY
Unit
V
mA
mW
W
℃
Min Typ Max Unit
-120
-120
V
-5
-100
nA
-100
-1
-1.2 V
-1
80
240
30 pF
120
MHz
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