KTA1660_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1660
Transistors
■ Features
● High Voltage
● High Transition Frequency
● Complementary to KTC4372
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-150
VCEO
-150
V
VEBO
-5
IC
-50
mA
IB
-10
500
mW
PC
1
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -150 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-10 mA, IB=-1mA
VBE(sat) IC=-10 mA, IB=-1mA
VBE VCE= -5V, IC= -30mA
hFE VCE= -5V, IC= -10mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -30V, IC= -10mA
Min Typ Max Unit
-150
-150
V
-5
-100
nA
-100
-0.8
-1.2 V
-0.9
70
240
5 pF
120
MHz
■ Classification of hfe
Type
KTA1660-O
Range
70-140
Marking
BO
KTA1660-Y
120-240
BY
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