KTA1659A_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1659A
■ Features
● High Transition Frequency
● Comlementary to KTC4370A
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
TO-220F
±0.20
3.^18±0.20
φ
±0.20
2.54 ±0.20
Unit: mm
0.70 ±0.20
1.47max
2.54typ
2.54typ
2.76 ±0.20
0.80 ±0.20
0.50 ±0.20
1. Base
2. Collector
3. Emitter
Rating
Unit
-180
-180
V
-5
-1.5
A
-0.15
20
W
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -180V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
hFE VCE= -5V, IC= -100mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -100mA
■ Classification of hfe
Type
Range
KTA1659A-O
70-140
KTA1659A-Y
120-240
Min Typ Max Unit
-180
-180
V
-5
-1
uA
-1
-1.5
V
-1.2
70
240
30
pF
100
MHz
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