KTA1504S-Y Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Epitaxial Planar PNP Transistor

SMD Type
Transistors
Epitaxial Planar PNP Transistor
KTA1504S-Y
■ Features
● Collector Power Dissipation: PC=150mW
● Collector Current: IC=-150mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCEO
-50
V
VCBO
-50
V
VEBO
-5
V
IC
-150
mA
PC
150
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
Test conditions
V(BR)CBO IC=-100μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100μA,IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE VCE=-6V, IC=-2mA
VCE(sat) IC=-100mA, IB=-10mA
fT VCE=-10V, IC=-1mA
Cob VCB=-10V, IE=0, f=1MHz
NF VCE=-6V, IC=-0.1mA,f=1kHz, Rg=10KΩ
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1 μA
-0.1 μA
120
240
-0.1 -0.3 V
80
MHz
4.0 7.0 pF
1.0 10 dB
1
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