KTA1298-3_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
KTA1298
Transistors
■ Features
● Collector Power Dissipation: PC=200mW
● Collector Current: IC=-800mA
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCEO
-35
V
VCBO
-30
V
VEBO
-5
V
IC
-800
mA
PC
200
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Test conditions
V(BR)CBO IC=-1mA,IE=0
V(BR)CEO IC=-10mA,IB=0
V(BR)EBO IE=-1mA,IC=0
ICBO VCB=-30V, IE=0
IEBO VEB=-5V, IC=0
VCE=-1V, IC=-100mA
hFE
VCE=-1V, IC=-800mA
VCE(sat) IC=-500mA, IB=-20mA
fT VCE=-5V, IC=-10mA
Cob VCB=-10V, IE=0, f=1MHz
■ hFE Classification
Type
Range
Marking
KTA1298-O
100-200
KIO
KTA1298-Y
160-320
KIY
Min Typ Max Unit
-35
V
-30
V
-5
V
-0.1 uA
-0.1 uA
100
320
40
-0.4 V
120
MHz
13
pF
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