KTA1281_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1281
TO-92L _{4.9 ± 0.2}
Unit:mm
■ Features
● Low Collector Saturation Voltage
● High Speed Switching Time
● Comlementary to KTC3209
0.7 ±0.1
0.45 ±0.1
1 23
1.27
2.54 ±0.1
1.60 (max)
4.0(min)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-50
VCEO
-50
V
VEBO
-5
IC
-2
A
PC
1
W
TJ
150
℃
Tstg
-55 to 150
1. Emitter
2.Collector
3.Base
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn On Time
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -10 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50mA
VBE(sat) IC=-1 A, IB=-50mA
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE= -2V, IC= -1.5 A
ton
Min Typ Max Unit
-50
-50
V
-5
-0.1
uA
-0.1
-0.5
V
-1.2
70
240
40
0.1
Storage Time
tstg
1
us
Fall Time
Collector output capacitance
Transition frequency
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA
0.1
40
pF
100
MHz
■ Classification of hfe(1)
Type
KTA1281-O
Range
70-140
KTA1281-Y
120-240
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