KTA1270_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
■ Features
● Excellent hFE Linearity
● Complementary to KTC3202.
Transistors
PNP Transistors
KTA1270
TO-92
4.8 ± 0.3
Unit:mm
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
12 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Emitter Current\
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
TJ
Tstg
Rating
-35
-30
-5
-500
500
625
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= -100uA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -35V , IE=0
IEBO VEB= 5V , IC=0
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
VBE(on) VCE= -1V, IC= -100mA
hFE(1) VCE= -1V, IC= -100mA
hFE(2) VCE= -6V, IC= -400mA
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
KTA1270-O
Range
70-140
Cob VCB= -6V, IE=0,f=1MHz
fT
VCE= -6V, IC= -20mA
KTA1270-Y
120-240
1.27
2.54
Unit
V
mA
mW
℃
1.Emitter
2.Collector
3.Base
Min Typ Max Unit
-35
-30
V
-5
-0.1
uA
-0.1
-0.25
-1.2 V
-1
70
240
O 25
Y 40
13
pF
200
MHz
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