KTA1266_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1266
TO-92
4.8 ± 0.3
Unit:mm
3.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Low Noise
● Complementary to KTC3198
0.60 Max
0.45 ± 0.1
0.5
12 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
-50
-50
-5
-150
625
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Noise figure
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100uA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= 5V , IC=0
VCE(sat) IC=-100mA, IB=-10mA
VBE(sat) IC=-100mA, IB=-10mA
hFE(1) VCE= -6V, IC= -2mA
hFE(2) VCE= -6V, IC= -150mA
NF
VCE=-6V, Ic=-0.1mA,
f=1KHZ, Rg=10KΩ
Cob VCB= -10V, IE=0,f=1MHz
fT
VCE= -10V, IC= -1mA
1.27
2.54
Unit
V
mA
mW
℃
1.Emitter
2.Collector
3.Base
Min Typ Max Unit
-50
-50
V
-5
-0.1
uA
-0.1
-0.3
V
-1.1
70
400
25
10 dB
7 pF
80
MHz
■ Classification of hfe(1)
Type
KTA1266-O
Range
70-140
KTA1266-Y
120-240
KTA1266-G
200-400
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