KTA1070_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1070
TO-92L _{4.9 ± 0.2}
Unit:mm
■ Features
● Low collector output capacitance
● High voltage and High fT
● Complementary to KTC3467
0.7 ±0.1
0.45 ±0.1
1 23
1.27
2.54 ±0.1
1.60 (max)
4.0(min)
1. Emitter
2.Collector
3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-200
-200
-5
-100
-200
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Reverse transfer capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100uA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -150V , IE=0
IEBO VEB= -4 V , IC=0
VCE(sat) IC=-20mA, IB=-2mA
VBE(sat) IC=-20mA, IB=-2mA
hFE VCE= -5V, IC= -10mA
Cre VCB= -30V, f=1MHz
Cob VCB= -30V, f=1MHz
fT
VCE= -30V, IC= -10mA
■ Classification of hfe
Type
KTA1070-O
Range
70-140
KTA1070-Y
120-240
Unit
V
mA
W
℃
Min Typ Max Unit
-200
-200
V
-5
-0.1
uA
-0.1
-0.6
V
-1
70
240
1.7
pF
2.6
150
MHz
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