KTA1038_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1038
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
■ Features
● High Breakdown Voltage
● Low Collector Saturation Voltage
● Comlementary to KTC2018
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc = 25℃
Symbol
VCBO
VCEO
VEBO
IC
IB
IE
PC
TJ
Tstg
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10
–0.05
2.40 ± 0.20
1. Base
2. Collector
3. Emitter
Rating
Unit
-100
-100
V
-5
-5
-0.5
A
5
40
W
150
℃
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -10 mA， IE=0
VCEO Ic= -50 mA，IB=0
VEBO IE= -10 mA， IC=0
ICBO VCB= -100V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-4 A, IB=-400mA
VBE(sat) IC=-4 A, IB=-400mA
VBE VCE= -5V, IC= -4 A
hFE(1) VCE= -5V, IC= -1 A
hFE(2) VCE= -5V, IC= -4 A
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -1 A
■ Classification of hfe(1)
Type
KTA1038-O
Range
70-140
KTA1038-Y
120-240
Min Typ Max Unit
-100
-100
V
-5
-0.1 uA
-0.1 mA
-2
-1.2 V
-1.5
70
240
20
90
pF
30
MHz
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