KTA1036_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

DIP Type
Transistors
PNP Transistors
KTA1036
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
■ Features
● Low Collector Saturation Voltage
● Comlementary to KTC2016
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-60
Emitter - Base Voltage
VEBO
-7
Collector Current - Continuous
IC
-3
Base Current
IB
-0.5
Collector Power Dissipation
Ta = 25℃
2
PC
Tc = 25℃
30
Junction Temperature
TJ
150
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Tstg
-55 to 150
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -100 uA， IE=0
Ic= -50 mA，IB=0
IE= -100 uA， IC=0
VCB= -60V , IE=0
Emitter cut-off current
IEBO VEB= -7V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-2 A, IB=-200mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-200mA
Base - emitter voltage
VBE VCE= -5V, IC= -500mA
DC current gain
hFE(1)
hFE(2)
VCE= -5V, IC= -500mA
VCE= -5V, IC= -3 A
10.00 ± 0.20
Unit
V
A
W
℃
Min
-60
-60
-7
100
20
0.50
+0.10
–0.05
2.40 ± 0.20
1. Base
2. Collector
3. Emitter
Typ Max Unit
V
-0.1
uA
-0.1
-1
-1.2 V
-1
300
Turn On Time
ton
0.4
Storage Time
tstg
1.7
us
Fall Time
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
■ Classification of hfe(1)
fT
VCE= -5V, IC= -500mA
Type
KTA1036-Y KTA1036-G
Range
100-200
150-300
0.5
45
pF
30
MHz
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