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KTA1024_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
DIP Type
Transistors
PNP Transistors
KTA1024
TO-92L 4.9 ± 0.2
Unit:mm
■ Features
● High Voltage and High fT
● Low Output Capacitance
● Comlementary to KTC3206
0.7 ±0.1
0.45 ±0.1
1 23
1.27
2.54 ±0.1
1.60 (max)
4.0(min)
1. Emitter
2.Collector
3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
TJ
Tstg
Rating
-150
-150
-5
-50
50
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Symbol
Test Conditions
VCBO Ic= -100 uA, IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA, IC=0
ICBO VCB= -150 V , IE=0
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
IEBO
VCE(sat)
VBE(sat)
VEB= -5V , IC=0
IC=-10 mA, IB=-1mA
IC=-10 mA, IB=-1mA
Base - emitter voltage
VBE VCE= -5V, IC= -30mA
DC current gain
hFE VCE= -5V, IC= -10mA
Collector output capacitance
Transition frequency
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -30V, IC= -10mA
■ Classification of hfe
Type
KTA1024-O
KTA1024-Y
Range
70-140
120-240
Unit
V
mA
W
℃
Min Typ Max Unit
-150
-150
V
-5
-0.1
uA
-0.1
-0.8
-1.2 V
-0.9
70
240
5 pF
120
MHz
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